High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire.
نویسندگان
چکیده
For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.
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ورودعنوان ژورنال:
- Chemical communications
دوره 48 48 شماره
صفحات -
تاریخ انتشار 2012